Polysilicon thin film transistor device and method of fabricating the same

ABSTRACT

A polysilicon thin film transistor device includes a gate metal pattern including a gate electrode and a gate line formed on a substrate, the gate metal pattern having a stepped portion, a gate insulating film formed on the gate metal pattern, a polysilicon semiconductor layer formed on the gate insulating film, the polysilicon semiconductor layer including an active region, lightly doped drain regions, a source region, and a drain region, a source electrode connected to the source region and a drain electrode connected to the drain region on the polysilicon semiconductor layer, and a pixel electrode connected with the drain electrode.

This application is a divisional application of Application No.11/812,182, filed Jun. 15, 2007 now U.S. Pat. No. 8,158,982, which is acontinuation of U.S. patent application Ser. No. 10/842,545, nowabandoned, both of which are hereby incorporated by reference. Thepresent invention also claims the benefit of Korean Patent ApplicationNo. 65813/2003 filed in Korea on Sep. 23, 2003, all of which are herebyincorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a polysilicon thin film transistordevice and a method of fabricating a polysilicon thin film transistordevice, and more particularly, to a bottom-gated silicon thin filmtransistor device and a method of fabricating a bottom-gated siliconthin film transistor device.

2. Description of the Related Art

As demand increases for flat panel displays having slim profiles, lightweight, and low power consumption, development of new liquid crystaldisplay (LCD) devices having superior color reproduction has increased.In general, LCD devices include two substrates facing each other,wherein electrodes are formed on facing surfaces of the substrates, anda liquid crystal material is injected into a space defined between thesubstrates. Accordingly, the LCD device displays images by changingalignment of liquid crystal molecules within the liquid crystal materialby an electric field generated by voltages applied to the electrodes inorder to vary a light transmittance of the liquid crystal material.

Among the different types of LCD devices, active matrix LCD (AM-LCD)devices are being developed due to their high image resolution andsuperior ability to display moving images. In the AM-LCD device, pixelelectrodes are formed on a lower thin film transistor (TFT) arraysubstrate, and a common electrode is formed on an upper color filtersubstrate. By controlling voltages applied between the pixel electrodesand the common electrode, liquid crystal molecules of the AM-LCD aredriven. Accordingly, the AM-LCD device has superior light transmittanceand aperture ratio characteristics. In addition, since the commonelectrode of the AM-LCD device functions as a ground, failure of LCcells of the AM-LCD device to electrostatic discharge is prevented. TheTFTs used in the AM-LCD device are classified as one of amorphoussilicon TFTs and a polycrystalline silicon (i.e., polysilicon) TFTsdepending on whether an active channel region functions using amorphoussilicon or polysilicon.

The amorphous TFT is commonly used because it enables fabrication oflarge-sized displays, thereby resulting in high productivity. Inaddition, fabrication of the amorphous TFT includes low temperaturedeposition of the amorphous silicon at temperatures less than 350° C.,and uses low priced insulator substrates. However, due to disorderedatomic arrangement, weak Si—Si bonds, and dangling bonds of theamorphous silicon, hydrogenized amorphous silicon (a:Si—H) is used. But,a:Si—H becomes a metastable state when exposed to light or an electricfield is applied, thereby causing instability. For example, when lightis irradiated onto a:Si—H, field mobility and reliability deteriorate,thereby making it difficult to use amorphous silicon in drivingcircuitry of an LCD device. In addition, as resolution of an LCD panelof the LCD devices increases, pitch of contact pads used for connectinggate lines and data lines with a tape carrier package (TCP) decreases,thereby causing problems using TCP bonding processes.

Meanwhile, since the polysilicon TFT has a field mobility higher thanthat of the amorphous TFT, driving circuitry can be made directly onto asubstrate, thereby reducing manufacturing costs for fabricating thedriving circuitry and simplifying mounting processes. In addition, sincefield mobility of the polysilicon TFTs are 100 to 200 times greater thanthe field mobility of the amorphous silicon TFTs, the polysilicon TFTShave fast response times and superior stability against temperature andlight. Moreover, the polysilicon TFTs have an advantage in that thedriving circuitry may be formed on an identical substrate together withother device elements.

FIG. 1 is a plan view of a pixel region of an LCD device according tothe related art. In FIG. 1, a plurality of parallel gate lines 111 and aplurality of parallel data lines 112 are arranged on a transparentsubstrate in a matrix configuration, thereby defining a plurality ofpixel regions. A TFT including a semiconductor layer 116, a gateelectrode 120, a source electrode 126, and a drain electrode 128 isformed at each crossing point of the gate and data lines 111 and 112,and a pixel electrode 134 electrically connected with the TFT isdisposed within one of the pixel regions defined by the gate and datalines 111 and 112. The source electrode 126 and the drain electrode 128electrically contact the semiconductor layer 116 through first andsecond contact holes 122 a and 122 b, and the drain electrode 128electrically contacts the pixel electrode 134 through a contact hole130. The semiconductor layer 116 is composed of polysilicon (p-Si),which is formed by depositing an amorphous silicon (a-Si) film on thesubstrate and annealing the deposited amorphous silicon film using alaser.

FIG. 2 is a cross sectional view along I-I′ of FIG. 1 according to therelated art. In FIG. 2, a buffer layer 114 is formed along an entiresurface of the substrate 100, and the gate electrode 120 is formed onthe buffer layer 114. Then, a gate insulating film 118 is formed on thegate electrode 120 and the buffer layer 114, and a semiconductor layer116 is formed on the gate insulating film 118.

Next, an interlayer insulating film 124 is formed to cover thesemiconductor layer 116, and includes first and second contact holes 122a and 122 b. Then, the source and drain electrodes 126 and 128 areformed on the interlayer insulating film 124 and within the first andsecond contact holes 122 a and 122 b, thereby connecting the source anddrain electrodes 126 and 128 with the semiconductor layer 116 throughthe first and second contact holes 122 a and 122 b.

Then, a passivation layer 132 having a drain contact hole 130 is formedon the source and drain electrodes 126 and 128 and the interlayerinsulating film 124. Next, a pixel electrode 134 is formed on thepassivation layer 132 and in the drain contact hole, and is connected tothe drain electrode 128 through the drain contact hole 130.

In FIGS. 1 and 2, the gate electrode 120 and a gate line 111 are formedof the same metal material. However, the gate electrode 120 and the gateline 111 have a height difference that may result in creating an opencircuit condition of the gate line during crystallization of theamorphous silicon.

FIG. 3 is a cross sectional view of a crystallization process accordingto the related art. In FIG. 3, the amorphous silicon film 116 is formedalong an entire surface of the substrate 100 to a thickness of 300˜4,000{hacek over (A)} by a plasma enhanced chemical vapor deposition (PECVD)method. Then, the amorphous silicon film 116 undergoes a hydrogenevolution at 400˜500° C. The hydrogen evolution is performed to removehydrogen added during the deposition of the amorphous silicon film 120a, thereby preventing film ablation phenomenon during a subsequent laserannealing process. Then, the hydrogen evolution-treated amorphoussilicon film 116 is annealed using a laser, and is crystallized.

In FIGS. 2 and 3, if a thickness of the gate electrode 120 is large, anopen circuit condition may be created during the laser annealing processof the amorphous silicon film 116 at a stepped portion “A.” This is dueto agglomeration of silicon atoms of the amorphous silicon film due tocurvature of the stepped portion “A” while the amorphous silicon film iscrystallized. Accordingly, the thickness of the gate electrode 120 mustbe appropriately thin. However, if the thickness of the gate electrodeis too thin, data transmission (i.e., line delay) may be caused due toan increase in electrical resistance of the gate line while the gateline and the gate electrode are driven.

SUMMARY OF THE INVENTION

Accordingly, the present invention is directed to a polysilicon thinfilm transistor device and a method of fabricating a polysilicon thinfilm transistor device that substantially obviate one or more problemsdue to limitations and disadvantages of the related art.

An object of the present invention is to provide a polysilicon thin filmtransistor device having good crystallization.

Another object of the present invention is to provide a method offabricating a polysilicon thin film transistor device having goodcrystallization.

Additional features and objects of the invention will be set forth inpart in the description which follows, and in part will be apparent fromthe description, or may be learned from practice of the invention. Theobjectives and other advantages of the invention will be realized andattained by the structure particularly pointed out in the writtendescription and claims hereof as well as the appended drawings.

To achieve these objects and other advantages and in accordance with thepurpose of the invention, as embodied and broadly described, apolysilicon thin film transistor device includes a gate metal patternincluding a gate electrode and a gate line formed on a substrate, thegate metal pattern having a stepped portion, a gate insulating filmformed on the gate metal pattern, a polysilicon semiconductor layerformed on the gate insulating film, the polysilicon semiconductor layerincluding an active region, lightly doped drain regions, a sourceregion, and a drain region, a source electrode connected to the sourceregion and a drain electrode connected to the drain region on thepolysilicon semiconductor layer, and a pixel electrode connected withthe drain electrode.

In another aspect, a method of fabricating a polysilicon thin filmtransistor device includes forming a gate metal pattern having a steppedportion on a substrate, forming a gate insulating film on the gate metalpattern, forming a polysilicon semiconductor layer on the gateinsulating film, forming an active region, lightly doped drain regions,a source region, and a drain region on the polysilicon semiconductorlayer by implanting impurities, forming a source electrode electricallyconnected to the source region and forming a drain electrodeelectrically connected to the drain region, and forming a pixelelectrode connected to the drain electrode.

In another aspect, a method of fabricating a polysilicon thin filmtransistor device includes forming a gate metal material on a substrate,forming a photoresist film pattern having a stepped portion by coating aphotoresist film on the gate metal material and diffraction-exposing thecoated photoresist film, patterning a gate electrode and a gate line bya first etching of the gate metal material exposed by the photoresistfilm pattern, performing a second etching of the gate electrode suchthat the gate electrode and the gate line have a thickness difference,forming a gate insulating film on the gate metal pattern, forming apolysilicon layer on the gate insulating film, forming a sourceelectrode electrically connected to a source region of the polysiliconlayer and forming a drain electrode electrically connected to a drainregion on the polysilicon layer, and forming a pixel electrode connectedto the drain electrode.

It is to be understood that both the foregoing general description andthe following detailed description of the present invention areexemplary and explanatory and are intended to provide furtherexplanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings; which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this application, illustrate embodiments of the invention andtogether with the description serve to explain the principle of theinvention. In the drawings:

FIG. 1 is a plan view of a pixel region of an LCD device according tothe related art;

FIG. 2 is a cross sectional view along I-I′ of FIG. 1 according to therelated art;

FIG. 3 is a cross sectional view of a crystallization process accordingto the related art;

FIG. 4 is a plan view of an exemplary array substrate including a thinfilm transistor structure according to the present invention;

FIGS. 5A and 5B are cross sectional views along II-II′ and III-III′ ofFIG. 4 according to the present invention; and

FIGS. 6A-6H are cross sectional views of an exemplary method offabricating a thin film transistor according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Reference will now be made in detail to the preferred embodiments of thepresent invention, examples of which are illustrated in the accompanyingdrawings.

FIG. 4 is a plan view of an exemplary array substrate including a thinfilm transistor structure according to the present invention, and FIGS.5A and 5B are cross sectional views along II-II′ and III-III′ of FIG. 4according to the present invention. In FIG. 4, a plurality of parallelgate lines 211 and a plurality of parallel data lines 212 may bearranged on a transparent substrate in a matrix configuration, therebydefining a plurality of pixel regions. In addition, a TFT including asemiconductor layer 216, a gate electrode 220, a source electrode 226,and a drain electrode 228 may be formed at each crossing region of thegate and data lines 211 and 212. Moreover, a pixel electrode 234electrically connected to the TFT may be disposed within one of thepixel regions defined by the gate and data lines 211 and 212.

In FIGS. 4 and 5A, the source electrode 226 and the drain electrode 228may electrically contact the semiconductor layer 216 through first andsecond contact holes 222 a and 222 b, and the drain electrode 228 mayelectrically contact the pixel electrode 234 through a drain contacthole 230. In addition, the semiconductor layer 216 may be composed ofpolysilicon (p-Si), which may be formed by depositing an amorphoussilicon (a-Si) film on the substrate and annealing the depositedamorphous silicon film using a laser.

In FIG. 4, the gate electrode 220 may extend from the gate line 211toward the pixel region, wherein both the gate electrode 220 and thegate line may be formed of the same material and within the same plane.In addition, the gate electrode 220 may be formed to have a thicknessless than a thickness of the gate line 211. Accordingly, since the gateelectrode 220 and the gate line 211 may be formed having differentthicknesses, an electrical open circuit condition of the semiconductorlayer 216 formed on the gate electrode 220 may be prevented due tocurvature of the stepped portions “B” of the gate line and gateelectrode 211 and 220.

In FIG. 5A, a buffer layer 214 may be formed along an entire surface ofan insulator substrate 200, and the gate electrode 220 may be formed onthe buffer layer 214. Then, a gate insulating film 218 may be formed onthe gate electrode 220 and the buffer layer 214, and a semiconductorlayer 216 may be formed on the gate insulating film 218. The gateelectrode 220 may be formed to have a thickness less than a thickness ofthe gate line 211 (in FIG. 4) by photolithographic processes using adiffraction mask considering a height different between the gateelectrode 220 and the gate buffer layer 214.

Then, an interlayer insulating film 224 may cover the semiconductorlayer 216 and may include first and second contact holes 222 a and 222b. Next, source and drain electrodes 226 and 228 may be formed on theinterlayer insulating film 224 and within the first and second contactholes 222 a and 222 b. Accordingly, the source and drain electrodes maybe electrically connected to the semiconductor layer 216 through thefirst and second contact holes 222 a and 222 b.

Next, a passivation layer 232 having a drain contact hole 230 may beformed on the source and drain electrodes 226 and 228 and the interlayerinsulating film 224. Then, a pixel electrode 234 may be formed on thepassivation layer 232 and within the drain contact hole 230.Accordingly, the pixel electrode 234 may be electrically connected tothe drain electrode 228 through the drain contact hole 230. In addition,the gate electrode 220 and the gate line 211 may be formed of the samemetal material but having a different thickness by usingphotolithography processes using a diffraction mask.

In FIG. 5A, since the gate electrode 220 and the gate line 211 (in FIG.4) may be formed having different thicknesses, an electrical opencircuit condition of the semiconductor layer 216 formed on the gateelectrode 220 may be prevented due to curvature of the stepped portions“B” of the gate line and gate electrode 211 and 220.

In FIG. 5B, the buffer layer 214 may be formed along the entire surfaceof the insulator substrate 200, wherein the gate electrode 220 and thegate line 211 connected with the gate electrode 220 may be formed on thebuffer layer 214. The gate insulating film 218 is formed on the gateelectrode 220 and the buffer layer 214, and the semiconductor layer 216is formed on the gate insulating film 218. Accordingly, the gateelectrode 220 and the gate line 211 may be formed of the same metalmaterial on the same layer, and the gate electrode 220 may be formedhaving a thickness less than a thickness of the gate line 211considering the semiconductor layer 216 formed on the gate electrode220. Thus, the gate electrode 220 and the gate line 211 may be formedhaving different thicknesses by using a photolithographic process usinga diffraction mask.

The interlayer insulating film 224 may be formed on the semiconductorlayer 216 and the gate insulating film 218 to cover the semiconductorlayer 216. Although not shown in FIG. 5B, but shown in FIG. 5A, thesource and drain electrodes 226 and 228 may be formed on the interlayerinsulating film 224 and within contact holes 222 a and 222 b.

Then, the passivation layer 232 maybe formed on the source and drainelectrodes 226 and 228 and the interlayer insulating film 224, and thepixel electrode 234 may be formed on the passivation layer 232 and maybe connected to the drain electrode 228. Thus, since the gate electrode220 is formed at a thickness less than a thickness of the gate line 211,a curvature of the stepped portion “B” between the gate electrode 220and the buffer layer 214 and a curvature of the stepped portion “B”between the gate electrode 220 and the gate line 211 may be reduced,thereby fabricating a polysilicon TFT having a good quality.

FIGS. 6A-6H are cross sectional views of an exemplary method offabricating a thin film transistor according to the present invention.In FIG. 6A, a buffer layer 214 and a gate metal film 220 a may besequentially deposited onto a transparent substrate 200.

In FIG. 6B, a photoresist film 217 a may be coated onto the gate metalfilm 220 a and then diffraction-exposed using a diffraction mask. Thediffraction mask may include a first portion through which light passes,a second portion having a lattice structure through which the partiallylight passes due to diffraction and destructive interference of thelight, and a third portion that completely blocks the light.

In FIG. 6C, a desired photoresist pattern 217 b may be formed having aheight difference between a thin gate electrode portion and a thick gateline portion formed on the gate metal pattern 220 a.

In FIG. 6D, the exposed portion of the gate metal film 220 a, which isnot covered with the photoresist pattern 217 b, may be etched, therebyforming a gate electrode pattern (not shown) and a gate line pattern(not shown).

In FIG. 6E, the photoresist pattern 217 b may be partially removed by anashing process such that the photoresist pattern 217 b on the gateelectrode pattern (not shown) may be reduced to a thickness less thanthe photoresist pattern 217 b on the gate line pattern (not shown).Then, the photoresist pattern 217 b and the underlying gate electrodepattern and gate line pattern may be etched a second time, therebyforming the gate electrode 220 and the gate line 211.

Due to a thickness difference between the photoresist pattern 217 b onthe gate electrode 220 and the photoresist pattern 217 b on the gateline 211, the gate electrode 220 is etched more than the gate line 211,and thus a thickness of the gate electrode 220 is reduced more than athickness of the gate line 211.

In FIG. 6F, the photoresist pattern 217 b remaining on the gate line 211may be removed, thereby forming the gate electrode 220 and the gate line211 having different thicknesses.

In FIG. 6G, a gate insulating film 218 may be formed on the gateelectrode 220. Then, a thin amorphous silicon (a-Si) film 216 a may bedeposited on the gate insulating film 118 to a thickness of a fewhundred {hacek over (A)}, such as about 500 {hacek over (A)}. Next, theamorphous silicon film 216 a may undergo a dehydrogenation process.Thereafter, the dehydrogenized amorphous silicon film 216 a may beannealed using a laser process, and may be crystallized to form asemiconductor layer 216 (in FIG. 6H) made of polysilicon

In FIG. 6H, since the amorphous silicon film has nearly no curvature atcorners of the gate electrode 220 due to the thickness of the gateelectrode 220, the amorphous silicon film is crystallized withoutcreating an opening circuit condition, so that the semiconductor layer216 of polysilicon can be formed.

Although not shown, impurity implantation may be performed to thesemiconductor layer, thereby completing a polysilicon thin filmtransistor with a semiconductor layer formed of a doped polysilicon. Forexample, a photoresist pattern may be formed on a substrate includingthe semiconductor layer 216, and a low concentration of ions may beimplanted into a part of the semiconductor layer 216 using thephotoresist pattern as a mask, thereby forming an ion implantationregion with a low concentration at a surface of the semiconductor layer216 of polysilicon.

Then, a photoresist pattern covering the low concentration ionimplantation region and other portion may be formed on the substrateincluding the semiconductor layer 216, and a high concentration of ionsmay be implanted into the semiconductor layer 216 using the photoresistpattern as a mask, thereby forming an active region where the impurityion is not doped, a heavily doped source region, a heavily doped drainregion, a lightly doped source region disposed between the active regionand the heavily doped source region, and a lightly doped drain (LDD)region disposed between the active region and the heavily doped drainregion.

Then, the photoresist pattern may be removed, and the doped ions of thesource and drain regions may be activated by a laser annealing process.Thereafter, the interlayer insulating film 224 (in FIGS. 5A and 5B)covering the semiconductor layer 216 and including first and secondcontact holes 222 a and 222 b may be formed. Source and drain electrodes226 and 228 (in FIG. 5A) may be formed spaced apart from each other onthe interlayer insulating film and within the first and second contactholes.

Then, the passivation layer 232 (in FIG. 5A) having the drain contacthole 230 (in FIG. 5A) may be formed on the source and drain electrodes.The pixel electrode 234 (in FIG. 5A) may be formed on the passivationlayer 232 and in the drain contact hole, and may be electricallyconnected to the drain electrode through the drain contact hole.

According to the present invention, in a polysilicon thin filmtransistor having a bottom gate structure, a gate line and a gateelectrode may be formed having different thicknesses, thereby preventingformation of an open circuit condition in an amorphous silicon layer tobe used as a semiconductor layer during crystallization of the amorphoussilicon due to a curvature of a stepped portion of the gate electrode.Thus, device failure may be reduced, thereby decreasing manufacturingcosts and enhancing device yield.

It will be apparent to those skilled in the art that variousmodifications and variations can be made in the polysilicon thin filmtransistor device and method of fabricating a polysilicon thin filmtransistor device of the present invention without departing from thespirit or scope of the invention. Thus, it is intended that the presentinvention cover the modifications and variations of this inventionprovided they come within the scope of the appended claims and theirequivalents.

What is claimed is:
 1. A method of fabricating a polysilicon thin filmtransistor device, comprising: forming a gate metal pattern made of asingle layer of a singular metal material having a stepped portionformed on a substrate, wherein either side of the stepped portion of thegate metal pattern has a different thickness; forming a gate insulatingfilm on the gate metal pattern; forming a polysilicon semiconductorlayer on the gate insulating film; forming an active region, lightlydoped drain regions, a source region and a drain region on thepolysilicon semiconductor layer by implanting an impurities; forming asource electrode electrically connected to the source region and forminga drain electrode electrically connected to the drain region; andforming a pixel electrode connected to the drain electrode, wherein thegate metal pattern comprises a gate electrode and a gate line, whereinthe gate electrode and the gate line are formed of the same singularmetal material in the same single layer, and wherein the gate electrodehas a thickness less than a thickness of the gate line.
 2. The methodaccording to claim 1, further comprising forming an interlayerinsulating layer having a contact hole for connecting the source regionto the source electrode for connecting the drain region to the drainelectrode, after the forming a polysilicon semiconductor layer.
 3. Themethod according to claim 1, wherein the forming the gate metal patterncomprises: depositing the single layer of the singular gate metalmaterial on the substrate; coating a photoresist film on the gate metalmaterial; forming a photoresist film pattern having a stepped portion bydiffraction-exposing the coated photoresist film; patterning the gateelectrode and the gate line by a first etching of the gate metalmaterial; performing a second etching of the gate electrode by etchingthe photoresist film pattern; and removing the photoresist film pattern.4. The method according to claim 3, further comprising removing thephotoresist film pattern disposed on the gate electrode by ash-treatingthe photoresist pattern having the stepped portion, after the patterningthe gate electrode and the gate line.
 5. A method of fabricating apolysilicon thin film transistor device, comprising: forming a gatemetal on a substrate; forming a photoresist film pattern having astepped portion by coating a photoresist film on the gate metal anddiffraction-exposing the coated photoresist film; patterning a gateelectrode and a gate line by a first etching of the gate metal exposedby the photoresist film pattern; performing a second etching of the gateelectrode such that the gate electrode and the gate line have athickness difference; forming a gate insulating film on the patternedgate metal; forming a polysilicon layer on the gate insulating film;forming a source electrode electrically connected to a source region ofthe polysilicon layer and forming a drain electrode electricallyconnected to a drain region on the polysilicon layer; and forming apixel electrode connected to the drain electrode, wherein the patternedgate metal is formed of a singular metal composition in a single layer,the gate electrode having a thickness less than a thickness of the gateline.
 6. The method according to claim 5, further comprising, removingthe photoresist film pattern disposed on the gate electrode byash-treating the photoresist pattern having the stepped portion, afterthe patterning the gate electrode and the gate line.